Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET. (2024). Journal of Engineering and Technological Sciences, 56(3), 367-376. https://doi.org/10.5614/j.eng.technol.sci.2024.56.3.5