POOBALAN, B.; HASHIM, N. S.; NATARAJAN, M.; RAHIM, A. F. A. Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET. Journal of Engineering and Technological Sciences, [S. l.], v. 56, n. 3, p. 367–376, 2024. DOI: 10.5614/j.eng.technol.sci.2024.56.3.5. Disponível em: https://jets.itb.ac.id/jets/article/view/219. Acesso em: 30 nov. 2025.