“Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET”, J. Eng. Technol. Sci., vol. 56, no. 3, pp. 367–376, Jun. 2024, doi: 10.5614/j.eng.technol.sci.2024.56.3.5.