Poobalan, B., N. S. Hashim, M. Natarajan, and A. F. A. Rahim. “Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation Using Enhanced Electron Mobility With Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET”. Journal of Engineering and Technological Sciences, vol. 56, no. 3, June 2024, pp. 367-76, doi:10.5614/j.eng.technol.sci.2024.56.3.5.